Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance

Published:2022-03-15 Issue:3 Volume:21 Page:625-632
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Zhang Chi,Hou Bo,Li Sheng,Lu Weihao,Huang Jingwen,Ma Yanfeng,Liu Siyang,Sun Weifeng

Funder

National Key R&D Program of China

the Fund for Transformation of Scientific and Technological Achievements of Jiangsu Province

the Distinguished Young Scholars Program of Southeast University

the National Natural Science Foundation of China under Grant

Scientific Research Foundation of Graduate School of Southeast University

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10825-022-01868-y.pdf

Reference20 articles.

1. Ruiliang Xie, Xu., Yang, G.X., Wei, J., Wang, Y., Wang, H., Tian, M., Zhang, F., Chen, W., Wang, L., Chen, K.J.: Switching transient analysis for normally-off GaN transistor with p-GaN gate in a phase-leg circuit. IEEE Trans. Power Electron. 34(4), 3711–3728 (2019). https://doi.org/10.1109/TPEL.2018.2852142

2. Nela, L., Erp, R.V., Kampitsis, G., Yildirim, H.K., Ma, J., Matioli, E.: Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky barrier diodes. IEEE Trans. Power Electron. 36(2), 1269–1273 (2021). https://doi.org/10.1109/TPEL.2020.3008226

3. Faraji, R., Farzanehfard, H., Kampitsis, G., Mattavelli, M., Matioli, E., Esteki, M.: Fully soft-switched high step-up nonisolated three-port DC-DC converter using GaN HEMTs. IEEE Trans. Industr. Electron. 67(10), 8371–8380 (2020). https://doi.org/10.1109/TIE.2019.2944068

4. Nie, H., Diduck, Q., Alvarez, B., Edwards, A.P., Kayes, B.M., Zhang, M., Ye, G., Prunty, T., Bour, D., Kizilyalli, I.C.: 1.5-kV and 2.2-mΩ·cm2 vertical GaN transistors on bulk-GaN substrates. IEEE Electron Device Lett. 35(9), 939–941 (2014). https://doi.org/10.1109/LED.2014.2339197

5. Ji, D., Agarwal, A., Li, W., Keller, S., Chowdhury, S.: Demonstration of GaN current aperture vertical electron transistors with aperture region formed by ion implantation. IEEE Trans. Electron Devices 65(2), 483–487 (2018). https://doi.org/10.1109/TED.2017.2786141

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-breakdown-voltage GaN-based vertical FinFET design;Journal of Power Electronics;2023-12-21

2. A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance;IEEE Transactions on Electron Devices;2023-12

3. Recent progress on the vertical GaN power transistor and its integrated circuit;Chinese Science Bulletin;2022-09-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3