Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation-Reference-Cited by-同舟云学术

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Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation

Published:2018-02 Issue:2 Volume:65 Page:483-487
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ji Dong^ORCID,Agarwal Anchal,Li Wenwen^ORCID,Keller Stacia,Chowdhury Srabanti

Funder

ARPA-E SWITCHES Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8263417/08252906.pdf?arnumber=8252906

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model;2024 IEEE Texas Power and Energy Conference (TPEC);2024-02-12

2. Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode;Microelectronics Journal;2024-02

3. Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors;physica status solidi (a);2023-07-04

4. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

5. High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion;Crystals;2023-04-21

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