Boosting the performance of an ultrascaled carbon nanotube junctionless tunnel field-effect transistor using an ungated region: NEGF simulation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s10825-019-01385-5.pdf
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3. Marin, E.G., et al.: First-principles simulations of FETs based on two-dimensional InSe. IEEE Electron Device Lett. 39(4), 626–629 (2018). https://doi.org/10.1109/led.2018.2804388
4. Marin, E.G., et al.: First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials. Nanoscale 9(48), 19390–19397 (2017). https://doi.org/10.1039/c7nr06015g
5. Pizzi, G., et al.: Performance of arsenene and antimonene double-gate MOSFETs from first principles. Nat. Commun (2016). https://doi.org/10.1038/ncomms12585
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