Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate
Author:
Affiliation:
1. Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5054281
Reference18 articles.
1. MoS 2 transistors with 1-nanometer gate lengths
2. Two-dimensional materials and their prospects in transistor electronics
3. Electronics based on two-dimensional materials
4. Field-Effect Transistors Built from All Two-Dimensional Material Components
5. Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
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