Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress

Author:

Strzalkowski I.,Kowalski M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study on Factors Affecting Black Matrix Charging of Positive Gamma LCD Products in High Humidity Operating Conditions;2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2020-07-20

2. Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C;Semiconductor Science and Technology;2011-05-23

3. Bias dependent charge trapping in MOSFETs during 1 and 6MeV electron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-06

4. Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection;Journal of Applied Physics;2003-08

5. Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures;Progress in SOI Structures and Devices Operating at Extreme Conditions;2002

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