A new measurement method for trap properties in insulators and semiconductors: Using electric field stimulated trap‐to‐band tunneling transitions in SiO2-Reference-Cited by-同舟云学术

A new measurement method for trap properties in insulators and semiconductors: Using electric field stimulated trap‐to‐band tunneling transitions in SiO2

Published:1991-12 Issue:11 Volume:70 Page:6864-6876
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thompson Scott E.,Nishida Toshikazu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.349810

Reference27 articles.

1. Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions

2. Thermal ionization rates and energies of electrons and holes at silver centers in silicon

3. LOW‐TEMPERATURE HIGH‐FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP‐AND SHALLOW‐LEVEL IMPURITY CENTER CONCENTRATIONS

4. Precise Determination of the Multiphonon and Photon Carrier Generation Properties using the Impurity Photovoltaic Effect in Semiconductors

5. Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2

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