Wafer size effect on material removal rate in copper CMP process
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials
Link
http://link.springer.com/article/10.1007/s12206-017-0539-9/fulltext.html
Reference10 articles.
1. ISMI 450 mm Guidelines, October (2011).
2. H. Kim and H. Jeong, Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization, J. of Electronic Materials, 33 (2004) 53–60.
3. H. Kim, H. Kim, H. Jeong, E. Lee and Y. Shin, Friction and thermal phenomena in chemical mechanical polishing, J. of Material Processing Technology, 130-131 (2002) 334–338.
4. H. Lee, Y. Park, S. Lee and H. Jeong, Effect of wafer size on material removal rate and its distribution in chemical mechanical polishing of silicon dioxide film, J. of Mechanical Science and Technology, 27 (10) (2013) 2911–2916.
5. Y. Park, Y. Lee, H. Lee and H. Jeong, Effect of heat according to wafer size on the removal rate and profile in CMP process, Electronic Material Letters, 9 (2013) 755–758.
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