Effect of wafer size on material removal rate and its distribution in chemical mechanical polishing of silicon dioxide film
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials
Link
http://link.springer.com/content/pdf/10.1007/s12206-013-0802-7.pdf
Reference16 articles.
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3. D. Castillo-Mejia and S. Beaudoin, A locally relevant Prestonian model for wafer polishing, J. of Electrochemical Society, 150(2) (2003) G96–G102.
4. H. Kim and H. Jeong, Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization, J. of Electronic Materials, 33 (2004) 53–60.
5. H. Hocheng, H. Y. Tsai and M. S. Tsai, Effects of kinematic variables on nonuniformity in chemical mechanical planarization, International J. of Machine Tools and Manufacture, 40 (2004) 1651–1659.
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