Planarization profile modeling using pad bulk deformation and real contact area analysis of macro-scale device pattern

Author:

Jeong SeonhoORCID,Jeong Jongmin,Shin Yeongil,Park Youngwook,Kabasawa Masashi,Hiyama Hirokuni,Watanabe Katsuhide,Matsuo Hisanori,Wada Yutaka,Jeong Haedo

Abstract

Abstract In general, the shape of the polished pattern is not flat but has a rounded curved profile. Unlike micro-patterns that have similar scales to pad asperities, macro-patterns have a very large scale compared to asperities, so bulk deformation must also be considered. To derive the pad bulk deformation, real contact area (RCA) measurements were performed in this study. Based on the preceding contact model, a semi-empirical model for RCA and bulk deformation was derived. After including the constructed pad bulk deformation function in the existing Greenwood–Williamson model, a new model that can derive the material removal rate profile according to the position in the pattern was presented. Unlike the general upper and lower removal rate behavior, this model shows a unique behavior. At the beginning of polishing, the edge shows a higher removal rate than the center, but after a specific step height, the center has a higher removal rate due to the curved shape. Analysis was performed for comparison between the proposed model equation and the experimental value. When the polishing profile in the 10 mm pattern was compared with the previous model and the proposed model, respectively, the existing model did not predict the removal rate distribution according to the position in the pattern. However, this model has the advantage of predicting both over-polishing at the edge of the pattern and high removal rate at the bottom. In addition, it was confirmed through simulation that the 4 mm and 2 mm patterns had excellent matching properties.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

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