Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Signal Processing
Reference31 articles.
1. E. Abiri, A. Darabi, A novel design of low power and high read stability ternary SRAM (T-SRAM), memory based on the modified gate diffusion input (m-GDI) method in nanotechnology. Microelectron. J. 58, 44–59 (2016)
2. A. Anand, A. Islam, CNFET-based ternary inverter and its variability analysis, in Proceedings of 3rd International Conference on Reliability Infocom Technologies and Optimization (2014), pp. 1–6
3. S. Angizi, F. Danehdaran, S. Sarmadi, S. Sheikhfaal, An ultra-high speed and low complexity quantum-dot cellular automata full adder. J. Low Power Electron. 11(2), 173–180 (2015)
4. S. Bala, M. Khosla, Design and performance analysis of low-power SRAM based on electrostatically doped tunnel CNTFETs. J. Comput. Electron. 18, 856–863 (2019)
5. N.H. Bastani, M.H. Moaiyeri, K. Navi, Carbon nanotube field effect transistor switching logic for designing efficient ternary arithmetic circuits. J. Nanoelectron. Optoelectron. 12(2), 118–129 (2017)
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