Design and performance analysis of low-power SRAM based on electrostatically doped tunnel CNTFETs

Author:

Bala Shashi,Khosla Mamta

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Subramanyam, J.B.V., Syed Basha, S.: Design of low leakage power SRAM using multithreshold technique. In: Intelligent Systems and Control (ISCO), 2016 10th International Conference on. IEEE (2016)

2. Chen, X., Peh, L.-S.: Leakage power modeling and optimization in interconnection networks. In: Low Power Electronics and Design, 2003. ISLPED’03. Proceedings of the 2003 International Symposium on. IEEE (2003)

3. Flautner, K., Kim, N.S., Martin, S., Blaauw, D., Mudge, T.: Drowsy caches: simple techniques for reducing leakage power. In: Computer Architecture, 2002. Proceedings. 29th Annual International Symposium on. IEEE (2002)

4. Kanda, K., Sadaaki, H., Sakurai, T.: 90% write powersaving SRAM using sense-amplifying memory cell. IEEE J. Solid-State Circuits 39(6), 927–933 (2004)

5. Yamaoka, M., Maeda, N., Shinozaki, Y., Shimazaki, Y., Nii, K., Shimada, S., Yanagisawa, K., Kawahara, T.: Low-power embedded SRAM modules with expanded margins for writing. In: Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International. IEEE (2005)

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