The pattern dependence of selectivity in low pressure selective epitaxial silicon growth-Reference-Cited by-同舟云学术

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The pattern dependence of selectivity in low pressure selective epitaxial silicon growth

Published:1992-04 Issue:4 Volume:21 Page:455-462
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Fitch J. T.,Denning D. J.,Beard D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02660411.pdf

Reference26 articles.

1. J. O. Borland and C. I. Drowley, Solid State Technology, Au- gust 1985, p. 141.

2. N. Kasai, N. Endo, A. Ishitani, and H. Kitajima, IEDM Tech. Digest, 419 (1985).

3. N. Endo, N. Kasai, A. Ishitani, H. Kitajima, and Y. Kurogi, IEEE Trans. Electron. DevicesED-33, 1659 (1986).

4. S. Nagao, K. Higashitani, Y. Akasaki, and H. Nakata, IEEE Trans. Electron DevicesED-33, 1738 (1986).

5. T. Yamada, S. Samata, H. Takato, and Y. Matsushita, IEDM Tech. Digest, 35 (1989).

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