Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode-Reference-Cited by-同舟云学术

Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode

Published:2016-11 Issue:7 Volume:59 Page:920-933
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadukh S. M.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-016-0855-z.pdf

Reference30 articles.

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2. J. Chu and A. Sher, Device Physics of Narrow Gap Semiconductors, Springer, N. Y. (2010).

3. A. V. Voitsekhovskii and V. N. Davydov, Photovoltaic MIS-Structures of the Narrow-Gap Semiconductors [in Russian], Radio I Svyaz, Tomsk (1990).

4. N. Wang, S. Liu, T. Lan, et al., Proc. SPIE, 8419, 84191D (2012).

5. G. H. Tsau, A. Sher, M. Madou, et al., J. Appl. Phys., 59, No. 4, 1238–1244 (1986).

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