Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures-Reference-Cited by-同舟云学术

Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures

Published:2017-05 Issue:1 Volume:60 Page:128-139
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadukh S. M.,Grigor’ev D. V.,Lyapunov D. V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-017-1051-5.pdf

Reference29 articles.

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4. Y. Nemirovsky and I. Bloom, J. Vac. Sci. & Technol. A, 6, No. 4, 2710–2715 (1988).

5. V. N. Ovsyuk, G. L. Kuryshev, Yu. G. Sidorov, et al., Matrix Photodetector Devices of Infrared Range [in Russian], Nauka, Novosibirsk (2001).

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