Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

Published:2018-02-13 Issue:5 Volume:47 Page:2694-2702
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Voitsekhovskii A. V.,Nesmelov S. N.^ORCID,Dzyadukh S. M.

Funder

The Tomsk State University Academic D.I. Mendeleev Fund Program

Russian Foundation for Basic Research

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-6108-x/fulltext.html

Reference37 articles.

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4. E.H. Nicollian and J.R. Brews, MOS Physics and Technology (New York: Wiley, 1982).

5. S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd ed. (New Jersey: Wiley, 2007).

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