Low‐frequency admittance measurements on the HgCdTe/Photox SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336511
Reference12 articles.
1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. Interface states on semiconductor/insulator surfaces
3. Surface‐state studies of nonparabolic band semiconductors using MIS structures
4. The interface between Hg1−xCdxTe and its native oxide
5. Electrical properties of the SiO2:HgCdTe interface
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2. Electrical characterizations of MIS structures based on variable-gap n(p )-HgCdTe grown by MBE on Si(0 1 3) substrates;Infrared Physics & Technology;2017-12
3. Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg1-xCdxTe with CdTe interlayer created in situ during MBE growth;Superlattices and Microstructures;2017-11
4. Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures;Russian Physics Journal;2017-05
5. Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode;Russian Physics Journal;2016-11
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