Diffusion and Point Defects in Silicon Materials
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Publisher
Springer Japan
Link
http://link.springer.com/content/pdf/10.1007/978-4-431-55800-2_1
Reference159 articles.
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4. Blöchl, P.E., Smargiassi, E., Car, R., Laks, D.B., Andreoni, W., Pantelides, S.T.: First-principles calculations of self-diffusion constants in silicon. Phys. Rev. Lett. 70, 2435 (1993). doi:10.1103/PhysRevLett.70.2435
5. Clark, S.J., Ackland, G.J.: Ab initio calculations of the self-interstitial in silicon. Phys. Rev. B. 56, 47 (1997). doi:10.1103/PhysRevB.56.47
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