Ion-beam induced atomic mixing in isotopically controlled silicon multilayers
Author:
Affiliation:
1. Institute of Materials Physics, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany
2. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4967317
Reference51 articles.
1. Ion beam mixing in metallic and semiconductor materials
2. Ion-beam mixing in pure and in immiscible copper bilayer systems
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4. Test of the hypothesis of transient molten state diffusion for swift-heavy-ion induced mixing
5. Amorphization kinetics of germanium during ion implantation
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