Amorphization kinetics of germanium during ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3041653
Reference30 articles.
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4. The effects of self‐ion bombardment (30–500 keV) on the surface topography of single‐crystal germanium
5. Status and open problems in modeling of as-implanted damage in silicon
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