Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures-Reference-Cited by-同舟云学术

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Published:2017-07-17 Issue:7 Volume:10 Page:813
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Radek Manuel,Liedke Bartosz,Schmidt Bernd,Voelskow Matthias,Bischoff Lothar,Hansen John,Larsen Arne,Bougeard Dominique,Böttger Roman,Prucnal Slawomir,Posselt Matthias,Bracht Hartmut

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/10/7/813/pdf

Reference60 articles.

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4. Irradiation effects in Ag-Fe bilayers: Ion-beam mixing, recrystallization, and surface roughening

5. Self-and dopant diffusion in silicon, germanium, and their alloys;Bracht,2015

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