Structural Innovation for Better MOSFET Performance Suitable for Low Power Application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01390-z.pdf
Reference41 articles.
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2. Jaiswal N, Kranti A (2018) A model for gate-underlap-dependent Short- Channel effects in Junctionless MOSFET. IEEE Trans Electron Devices 65(3):881–887. https://doi.org/10.1109/TED.2018.2796602
3. Munteanu D, Autran J-L (2012) 3-D numerical simulation of bipolar amplification in Junctionless double-gate MOSFETs under heavy-ion irradiation. IEEE Trans Nucl Sci 59(4):773–780. https://doi.org/10.1109/TNS.2012.2184139
4. Park C-H, Ko M-D, Kim K-H, Sohn C-W, Baek CK, Jeong Y-H, Lee J-S (2011) “Comparative study of fabricated junctionless and inversion-mode nanowire FETs”. 69th Device Research Conference. https://doi.org/10.1109/drc.2011.5994478
5. Lee C-W, Borne A, Ferain I, Afzalian A, Yan R, Akhavan ND, Razavi P, Colinge J-P (2010) High-temperature performance of silicon Junctionless MOSFETs. IEEE Trans Electron Devices 57(3):620–625. https://doi.org/10.1109/TED.2009.2039093
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