A 2-D Analytical Modeling of Dual Work Function Metal Gate MOSFET Using High-K Gate Dielectric with Enhanced RF/Analog Performance for Low Power Applications-Reference-Cited by-同舟云学术

A 2-D Analytical Modeling of Dual Work Function Metal Gate MOSFET Using High-K Gate Dielectric with Enhanced RF/Analog Performance for Low Power Applications

Published:2019-12-01 Issue:9 Volume:12 Page:2065-2072
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kiran Kumar R.^ORCID,Shiyamala S.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-019-00290-7.pdf

Reference23 articles.

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2. Kumar MJ, Reddy GV (2005) Diminished short channel effects in nanoscale double-gate silicon-on-insulator metal–oxide–semiconductor field-effect-transistors due to induced back-gate step potential. Jpn J Appl Phys 44:6508

3. Liu H-X, Li J, Li B, Cao L, Yuan B (2011) Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs. Chin Phys B 20:017301. https://doi.org/10.1088/1674-1056/20/1/017301

4. Dubey S, Santra A, Saramekala G, Kumar M, Tiwari PK (2013) An analytical threshold voltage model for triple-material cylindrical gate-all-around (TM-CGAA) MOSFETs. IEEE Trans Nanotechnol 12:766–774. https://doi.org/10.1109/TNANO.2013.2273805

5. Munteanu D, Autran JL, Harrison S, Nehari K, Tintori O, Skotnicki T (2005) Compact model of the quantum short-channel threshold voltage in symmetric double-gate MOSFET. Mol Simul 31:831–837. https://doi.org/10.1080/08927020500313995

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