Analysis of D.C Parameters of Short-Channel Heterostructure Double Gate Junction-Less MOSFET Circuits Considering Quantum Mechanical Effects
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00507-0.pdf
Reference22 articles.
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3. Jazaeri F, Barbut L, Koukab A, Sallese J-M et al (Apr.2013) Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime. Solid State Electron 82:103–110
4. Dehzangi A, Larki F, Hutagalung SD, Saion EB, Abdullah AM, Hamidon MN, Majlis BY, Kakooei S, Navaseri M, Kharazmi A et al (2012) Numerical investigation and comparison with experimental characterisation of side gate p-type junctionless silicon transistor in pinch-off state. IET Micro and Nano Letters 7(9):981–985
5. Vadizadeh, Mahdi. et al. “Designing a Hetrostructure Junctionless-Field Effect Transistor (HJL-FET) for High-Speed Applications.” Journal of the Korean Physical Society 71, no. 5 (2017): 275–82. https://doi.org/10.3938/jkps.71.275
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