Designing a hetrostructure junctionless-field effect transistor (HJL-FET) for high-speed applications
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3938/jkps.71.275.pdf
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters;Applied Physics A;2021-12-16
3. Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaxIn1−xAs/GaAs field-effect transistor;International Journal of Modern Physics B;2021-08-17
4. Analysis of D.C Parameters of Short-Channel Heterostructure Double Gate Junction-Less MOSFET Circuits Considering Quantum Mechanical Effects;Silicon;2020-06-08
5. Quantum simulation of a junctionless carbon nanotube field-effect transistor under torsional strain;Superlattices and Microstructures;2020-02
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