A Simple Proposal to Reduce Self-heating Effect in SOI MOSFETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00773-y.pdf
Reference28 articles.
1. Ghaffari M, Orouji AA (2018) A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect. Superlattice Microst 118:61–78
2. Tenbroek BM, Lee MS, Redman-White W, Bunyan JT, Uren MJ (1996) Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques. IEEE Trans Electron Devices 43:2240–2248
3. Anvarifard MK, Orouji AA (2013) Improvement of self-heating effect in a novel nanoscale SOI MOSFET with undoped region: A comprehensive investigation on DC and AC operations. Superlattice Microst 60:561–579
4. Tahne BA, Naderi A, Heirani F (2020) Reduction in self-heating effect of SOI MOSFETs by Three vertical 4H-SiC layers in the BOX. Silicon 12(4):975–986. https://doi.org/10.1007/s12633-019-00191-9
5. Chu PK (2005) Novel silicon-on-insulator structures for reduced self-heating effects. IEEE Circuits Syst Mag 5:18–29
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