Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00191-9.pdf
Reference37 articles.
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3. Chu PK (2005) Novel silicon-on-insulator structures for reduced self-heating effects. IEEE Circ Syst Mag 5:18–23
4. Daghighi A, Zamani S (2010) Investigation of the thermal effects of 45nm silicon on diamond (SOD) transistor. Diam Relat Mater 32:63–68
5. Rahimian M, Orouji AA (2012) A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect. Mater Sci Semicond Process 15:445–454
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