A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference40 articles.
1. Technology and design challenges for low power and high performance;De;Proc. Int. Symp. Low Power Electron. Des.,1999
2. Design of ion-implanted MOSFET's with very small physical dimensions;Dennard;IEEE J. Solid State Circ.,1974
3. Optimization and realization of sub-100-nm channel length single Halo p-MOSFETs;Borse;IEEE Trans. Electron. Dev.,2002
4. High-performance deep submicron ge pMOSFETs with halo implants;Nicholas;IEEE Trans. Electron. Dev.,2007
5. Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applications;Chakraborty;IEEE Trans. Electron. Dev.,2007
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