AlInN/GaN HEMT on Silicon Substrate with GD-Field-Plate: Modelling and Simulation of Electric-Field and Breakdown-Voltage Characteristics
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01771-y.pdf
Reference20 articles.
1. Sohel SH et al (2019) Polarization engineering of AlGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band applications. IEEE Electron Device Lett 40(4):522–525
2. Alshahed M, Heuken L, Alomari M, Cora I, Toth L, Pecz B, Wachter C, Bergunde T, Burghartz JN (2018) Low-dispersion, high-voltage, low leakage GaN HEMTs on native GaN substrates. IEEE Trans Elect Dev 65(7):2939–2947
3. Kim B, Fark H, Eom S (2018) Kaband MMIC using AlGaN/GaN-on-Siwith recessed high-k dual MIS-structure. IEEE Elec Dev Lett 39(7):995–998
4. Amarnath G, Panda DK, Lenka TR (2019) Modeling and simulation of DC and microwave characteristics in AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate length. Int J Numer Model: Electron Netw Devices Fields 32(1):e2456
5. Chugh N, Kumar M, Haldar S et al (2021) Applicability of field plate in double channel GaN HEMT for radio-frequency and power-electronic applications. Silicon 14:1029–1038
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