Enhancement of a Nanoscale Novel Esaki Tunneling Diode Source TFET (ETDS-TFET) for Low-Voltage Operations
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-0043-6.pdf
Reference22 articles.
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4. Saremi M, Ebrahimi B, Afzali-Kusha A, Mohammadi S (2011) A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. Microelectron Eng 51(12):2069–2076. https://doi.org/10.1016/j.microrel.2011.07.084
5. Jamali Mahabadia SE, Rajabi S, Loiacono J (2015) A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self-heating effect enhancement. Superlattice Microst 85:872–879. https://doi.org/10.1016/j.spmi.2015.07.011
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