Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs-Reference-Cited by-同舟云学术

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Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs

Published:2015-11-30 Issue:4 Volume:9 Page:629-635
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Jabli Fikria,Gassoumi Malek,Hamadi Nawfel Ben,Charfeddine Manel,Alharbi T.,Zaidi Mohamed Ali,Maaref Hassen

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-015-9337-0.pdf

Reference31 articles.

1. Kumar V, Kuliev A, Schwindt R, Muir M, Simin G, Yang J, Khan MA, Adesida I (2003) Solid-State Electron 47:1577

2. Manfra MJ, Weimann N, Baeyens Y, Roux P, Tennant DM (2003) Electron lett 39:694

3. Morkoç H (2008) Handbook of Nitride Semiconductors and devices, vol I-III. Wiley-VCH, Berlin

4. Gangwani P, Pandey S, Haldar S, Gupta M, Gupta RS (2007) Solid State Electron 51:130–135

5. Bradely ST, Young AP, Brillson LJ, Murphy MJ, Schaff MJ, Eastman LF (2001) IEEE Trans Electron Devices 48:412

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1. Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT;Journal of Computational Electronics;2023-12-19

2. RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs;Micro and Nanostructures;2022-11

3. Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition;Bulletin of Materials Science;2019-01-08

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