Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanics of Materials,General Materials Science
Link
http://link.springer.com/article/10.1007/s12034-018-1696-x/fulltext.html
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