Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Published:2017-12 Issue:7 Volume:40 Page:1435-1439
ISSN:0250-4707
Container-title:Bulletin of Materials Science
language:en
Short-container-title:Bull Mater Sci

Author:

Aldemir DurmuŞ Ali^ORCID,Kökce Ali,Özdemir Ahmet Faruk

Publisher

Springer Science and Business Media LLC

Subject

Mechanics of Materials,General Materials Science

Link

http://link.springer.com/article/10.1007/s12034-017-1509-7/fulltext.html

Reference45 articles.

1. Farag A A M, Gunduz B, Yakuphanoglu F and Farooq W A 2010 Synth. Met. 160 2559

2. Ginev G, Riedl T, Parashkov R, Johannes H-H and Kowalsky W 2004 Appl. Surf. Sci. 234 22

3. Gupta R K, Aydın M E and Yakuphanoglu F 2011 Synth. Met. 161 2355

4. Kampen T U, Park S and Zahn D R T 2002 Appl. Surf. Sci. 190 461

5. Soylu M and Yakuphanoglu F 2012 Superlattices Microstruct. 52 470

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review;Nano Energy;2024-06

2. Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes;Electronic Materials;2023-06-16

3. Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures;Journal of Materials Science: Materials in Electronics;2021-08-13

4. Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range;Journal of Materials Science: Materials in Electronics;2020-04-18

5. The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures;Materials Science in Semiconductor Processing;2019-11