The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures-Reference-Cited by-同舟云学术

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The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Published:2019-11 Issue: Volume:102 Page:104587
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Coșkun M.,Polat O.,Coșkun F.M.,Efeoğlu H.,Caglar M.,Durmus Z.,Turut A.

Funder

The Scientific and Technological Research Council of Turkey

ESF: European Science Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference49 articles.

1. Influence of Schottky and Poole–Frenkel emission on the retention property of YMnO3-based metal/ferroelectric /insulator/semiconductor capacitors;Ito;J. Appl. Phys.,2003

2. Preparation of ferroelectric (Y,Yb)MnO3 films by chemicals solution process;Suzuki;J. Ceram. Soc. Jpn.,2008

3. Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors;Ito;J. Appl. Phys.,2003

4. Current-voltage characteristics of PLD grown manganite based ZnO/La0.5Pr0.2Sr0.3MnO3 /SrNb0.002Ti0.998O3 thin film heterostructure;Khachar;Solid State Commun.,2012

5. Transport properties of Y0.95Ca0.05MnO3/Si thin film junction;Dhruv;Physica B,2017

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