Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature-Reference-Cited by-同舟云学术

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Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature

Published:2016-12 Issue: Volume:688 Page:875-881
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jyothi I.,Janardhanam V.,Kim Jong-Hee,Yun Hyung-Joong,Jeong Jae-Chan,Hong Hyobong,Lee Sung-Nam,Choi Chel-Jong

Funder

R&D Program

Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea

Ministry of Education of the Republic of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference45 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

3. Semiconductor ultraviolet detectors

4. Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid-thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties;Journal of Alloys and Compounds;2022-10

2. Rapid-Thermal-Annealing-Induced Microstructural Evolution of Au/Ni/Β-Ga2o3 Schottky Diodes Correlated with Their Electrical Properties;SSRN Electronic Journal;2022

3. High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer;Surfaces and Interfaces;2021-12

4. Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application;Journal of Solid State Chemistry;2021-09

5. An in-depth examination of opto-electrical properties of In-Yb2O3 thin films and fabricated Al/In-Yb2O3/p-Si (MIS) hetero junction diodes;Applied Nanoscience;2021-04-21

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