Rapid-Thermal-Annealing-Induced Microstructural Evolution of Au/Ni/Β-Ga2o3 Schottky Diodes Correlated with Their Electrical Properties-Reference-Cited by-同舟云学术

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Rapid-Thermal-Annealing-Induced Microstructural Evolution of Au/Ni/Β-Ga2o3 Schottky Diodes Correlated with Their Electrical Properties

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Janardhanam V.,Boldbaatar Sosorburam,Jyothi I.,Shim Kyu-Hwan,Kim Dong-Ho,Choi Chel-Jong

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference47 articles.

1. Recent progress in Ga 2 O 3 power devices;M Higashiwaki;Semicond. Sci. Technol,2016

2. Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type ?-Ga 2 O 3;P R Sekhar Reddy;J. Electron. Mater,2020

3. Development of gallium oxide power devices;M Higashiwaki;Phys. Status Solidi A,2014

4. Schottky Barrier Height Engineering in ?-Ga 2 O 3 Using SiO 2 Interlayer Dielectric;A Bhattacharyya;IEEE J. Electron Devices Soc,2020

5. Temperature dependent electrical properties of pulse laser deposited Au/Ni/?-Ga 2 O 3 Schottky diode;Q Feng;Appl. Phys. Lett,2018

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