A New Structure for Lateral Double Diffused MOSFET to Control the Breakdown Voltage and the On-Resistance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-0092-5.pdf
Reference25 articles.
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2. Crawford RH (1967) Capacitive feed through calculations in MOSFET IC's. Proc IEEE 55:1221–1222
3. Elmasry MI (1981) Digital MOS integrated circuits. IEEE Press, New York
4. Orouji AA, Anvarifard MK (2013) SOI MOSFET with an insulator region (IR-SOI): a novel device for reliable nanoscale CMOS circuits. Mater Sci Eng B 178:431–437
5. Anvarifard MK (2016) Increase in the scattering of electric field lines in a new high voltage SOI MESFET. Superlattice Microst 97:15–27
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