Effect of Ge Mole Fraction on Electrical Parameters of Si1−xGex Source Step-FinFET and its Application as an Inverter
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/article/10.1007/s12633-018-9846-8/fulltext.html
Reference36 articles.
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