Performance Analysis of Si0.8Ge0.2 Double-Gate MOSFETs-Reference-Cited by-同舟云学术

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Performance Analysis of Si0.8Ge0.2 Double-Gate MOSFETs

Published:2024-05-02 Issue: Volume:9 Page:01-08
ISSN:
Container-title:2024 International Conference on Electronics, Computing, Communication and Control Technology (ICECCC)
language:
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Author:

Singh Akshat¹,Kumar Manoj¹,Jyoti ¹

Affiliation:

1. Electronics and Communication Engineering. UIET Maharshi Dayanand University,Rohtak,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10592863/10592866/10593982.pdf?arnumber=10593982

Reference60 articles.

1. Double gate MOSFETs: Comparison with single gate MOSFETs regarding channel material configuration, architecture, and prospective uses;Singh;Int. J. Inn. Tech. Expl Eng.,2020

2. Modelling of Self-Heating;Khushwa;Substrate Depletion, Noise and High-Frequency Effects in FD SOI MOSFETs. Department of Electrical Engineering, IIT Kanpur,2016

3. Aestimo 1D is an open-source, general-purpose, self-consistent 1D Schrödinger-Poisson solver;Lisesivdin;Commat Sci.,2021

4. High-performance germanium double-gate N-MOSFET;Singh;International Journal of Modern Engineering Research,2015

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