Investigation of a dual gate pocket-doped drain engineered tunnel FET and its reliability issues
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-023-06394-7.pdf
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3. J.-P. Colinge (ed.), FinFETs and other multi-gate transistors, vol. 73 (Springer, New York, 2008)
4. S. Bangsaruntip et al., Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett. 31(9), 903–905 (2010)
5. S.O. Koswatta, M.S. Lundstrom, D.E. Nikonov, Performance comparison between pin tunneling transistors and conventional MOSFETs. IEEE Trans. Electron Devices 56(3), 456–465 (2009)
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