Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01383-y.pdf
Reference31 articles.
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3. Preethi S, Balamurugan NB (2021) Analytical modeling of surrounding gate Junctionless MOSFET using finite differentiation method. Silicon 13:2921–2931. https://doi.org/10.1007/s12633-020-00653-5
4. Venish Kumar T, Balamurugan NB (2018) Analytical modeling of InSb/AlInSb heterostructure dual gate high electron mobility transistors. AEU - International Journal of Electronics and Communications 94:19–25
5. Hiroyuki Sakaki “Velocity-Modulation Transistor (VMT) –A New Field-Effect Transistor Concept” Japanese Journal of Applied Physics, Volume 21, Number 6A, 1982
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