High-performance InSb based quantum well field effect transistors for low-power dissipation applications-Reference-Cited by-同舟云学术

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High-performance InSb based quantum well field effect transistors for low-power dissipation applications

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Ashley T.,Emeny M. T.,Hayes D. G.,Hilton K. P.,Jefferies R.,Maclean J. O.,Smith S. J.,Tang A. W-H.,Wallis D. J.,Webber P. J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424207.pdf?arnumber=5424207

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications;Silicon;2021-09-18

2. Broadband InSb/Si heterojunction photodetector with graphene transparent electrode;Nanotechnology;2020-05-14

3. Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs);Journal of Computational Electronics;2020-04-22

4. Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band;Japanese Journal of Applied Physics;2016-07-13

5. Indium Antimonide Nanowires: Synthesis and Properties;Nanoscale Research Letters;2016-03-24

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