Improvising the Switching Ratio through Low-k / High-k Spacer and Dielectric Gate Stack in 3D FinFET - a Simulation Perspective
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00618-8.pdf
Reference27 articles.
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