Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application-Reference-Cited by-同舟云学术

Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application

Published:2024-06-26 Issue: Volume: Page:246-257
ISSN:
Container-title:Nanoelectronic Devices and Applications
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Author:

Topno Nawal¹,Swain Raghunandan¹,Dash Dinesh Kumar¹,Suresh M.²

Affiliation:

1. Department of Electronics and Telecommunication, Parala Maharaja Engineering College, Berhampur, Odisha, 761003, India

2. School of Electronics Engineering, VIT Bhopal University, Bhopal, Madhya Pradesh-466114, India

Abstract

Due to the shortening of channel length in accordance with Moore’s law, short channel effects degrade transistor performance. This chapter explains the emerging nanosheet fin field effect transistor (FinFET) design and operation through technology computer-aided design (TCAD) tool-based design and simulation. A 10 nm node Ge-channel nanosheet FinFET is designed and simulated by incorporating quantum transport models in both DC and AC environments. Corresponding short channel effect (SCE) parameters are obtained and compared with Si-channel nanosheet FinFETs. Further, device feasibility for low-power and high-frequency applications is studied.<br>

Publisher

BENTHAM SCIENCE PUBLISHERS

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