Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions-Reference-Cited by-同舟云学术

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Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions

Published:2018-08 Issue:8 Volume:65 Page:3521-3527
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Eunseon^ORCID,Heo Keun^ORCID,Cho Seongjae^ORCID

Funder

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

IDEC Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8416787/08396843.pdf?arnumber=8396843

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of process and geometrical parameters of gate stack Inverted-T shape junction less FET at 20 nm technology node;Micro and Nanostructures;2024-09

2. Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application;Nanoelectronic Devices and Applications;2024-06-26

3. Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET;2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE);2024-05-09

4. Effect of Temperature on RF and Linearity Performance of Inverted-T FinFET;Transactions on Electrical and Electronic Materials;2024-04-29

5. A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications;Silicon;2024-01-30

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