Performance Assessment of High-k SOI GaN FinFET with Different Fin Aspect Ratio for RF/Wireless Applications
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11277-024-11293-y.pdf
Reference38 articles.
1. Moore GE (1998). Cramming more components onto integrated circuits. Proceedings of the Ieee, 86, 82–85. https://doi.org/10.1109/JPROC.1998.658762.
2. Kumar, A., Gupta, N., & Chaujar, R. (2016). TCAD RF performance investigation of transparent gate recessed channel MOSFET. Microelectronics Journal, 49, 36–42. https://doi.org/10.1016/j.mejo.2015.12.
3. Jeon, D. Y., Park, S. J., Mouis, M., Barraud, S., Kim, G. T., & Ghibaudo, G. (2013). Low-temperature electrical characterization of junctionless transistors. Solid State Electronics, 80, 135–141. https://doi.org/10.1016/j.sse.2012.10.018.
4. Doria, R. T., Pavanello, M. A., Lee, C. W., Ferain, I., Dehdashti-Akhavan, N., Yan, R., Razavi, P., Yu, R., Kranti, A., & Colinge, J. P. (2010). Analog operation and harmonic distortion temperature dependence of nMOS Junctionless transistors. Ecs Transactions, 31(1), 13–20. https://doi.org/10.1149/1.3474137.
5. Samal, A., Pradhan, K. P., & Mohapatra, S. K. (2021). Improvising the switching ratio through low-k/High-k spacer and dielectric gate stack in 3D FinFET - a simulation perspective. Silicon, 13, 2655–2660. https://doi.org/10.1007/s12633-020-00618-8.
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