Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes

Published:2018-01-06 Issue:4 Volume:10 Page:1591-1599
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Ravikumar K.,Agilan S.,Muthukumarasamy N.,Raja M.,Lakshmanan Raja,Ganesh R.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s12633-017-9643-9/fulltext.html

Reference41 articles.

1. Ozer M, Yldiz DE, Altndal S, Bulbu MM (2007) Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes. Solid State Electron 51:941–949

2. Ozkartal A, Temirci C (2016) Relationship between photovoltaic and diode characteristic parameters in the Sn/p-Si Schottky type photovoltaics. Sol Energy 132:96–102

3. Altuntas H, Bengi A, Asar T, Aydemir U, Sarkavak B, Ozen Y, Altndal S, Ozcelik S (2010) Interface state density analyzing of Au/TiO2(rutile)/n–Si Schottky barrier diode. Surf Interface Anal 42:1257–1260

4. Liu Y, Yu J, Lai PT (2014) Investigation of WO3/ZnO thin-film heterojunction based Schottky diodes for H2 gas sensing. Int J Hydrogen energy 39:10313–10319

5. Gokcen M, Altndal S, Karaman M, Aydemir U (2011) Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer. Physica B 406:4119–4123

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5. Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr:SnO2/p-Si Schottky barrier diode application;Physica B: Condensed Matter;2020-12

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