Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature
2. Nanobelts of Semiconducting Oxides
3. Low-Temperature Fabrication of Highly Crystalline SnO2 Nanorods
4. Determination of the electronic parameters of nanostructure SnO2/p-Si diode
5. On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies
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