Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr:SnO2/p-Si Schottky barrier diode application
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference69 articles.
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3. Influence of annealing temperature on structural and dc electrical properties of SnO2 thin films for Schottky barrier diodes;Ravikumar;Siliconindia,2018
4. Evaluation of Schottky barrier height on 4H-SiC m-face for Schottky barrier diode wall integrated trench MOSFET;Kobayashi;Jpn. J. Appl. Phys.,2017
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