Author:
ElKashlan Rana Y.,Samy Omnia,Anis Azza,Ismail Yehea,Abdelhamid Hamdy
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Akhavan ND, Umana-Membreno GA, Gu R, Antoszewski J, Faraone L (2018) Random dopant fluctuations and statistical variability in n-channel junctionless FETs. Nanotechnology 29:025203.
https://doi.org/10.1088/1361-6528/aa9d45
2. Baccarani G, Reggiani S (1999) A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects. IEEE Trans Electron Devices 46:1656–1666.
https://doi.org/10.1109/16.777154
3. Chauhan YS, Lu DD, Vanugopalan S, Khandelwal S, Duarte JP, Paydavosi N, Niknejad A, Hu C (2015) Channel current and real device effects. FinFET modeling for IC simulation and design using the BSIM-CMG standard. Elsevier, pp 99–125
4. Cheng B, Brown AR, Roy S, Asenov A, Member S, Structures AD (2010) PBTI / NBTI-related variability in TB-SOI and DG MOSFETs. IEEE Electron Device Lett 31:408–410.
https://doi.org/10.1109/LED.2010.2043812
5. Dasgupta A, Agarwal A, Chauhan YS (2017) Unified compact model for nanowire transistors including quantum effects and quasi-ballistic transport. IEEE Trans Electron Devices 64(1–9):1837–1845.
https://doi.org/10.1109/TED.2017.2672207
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献