Parameter Variations of a Short Channel Gaas Junctionless-Gate-All-Around Field-Effect Transistor Including Quantum Mechanical Effects
Author:
Publisher
Elsevier BV
Subject
General Earth and Planetary Sciences,General Environmental Science
Reference46 articles.
1. One dimensional transport in silicon nanowire junction-less field effect transistors;M M Mirza;Scientific reports,2017
2. Junctionless versus inversion-mode gate-all-around nanowire transistors from a low-frequency noise perspective;E Simoen;IEEE Transactions on Electron Devices,2018
3. Short Channel Effects (SCEs) Based Comparative Study of Double-Gate (DG) and Gate-All-Around (GAA) FinFET Structures for Nanoscale Applications;V Narendar;Advances in VLSI, Communication, and Signal Processing,2020
4. Influence of Gate Material and Process on Junctionless FET Subthreshold Performance;Munawar A Riyadi;International Journal of Electrical and Computer Engineering,2016
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